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  • Novel Atomic Layer Processes for Semiconductor Manufacturing: Area Selective Deposition, Atomic Layer Annealing, and Atomic Layer Etching (invited review)
    92
    Novel Atomic Layer Processes for Semiconductor Manufacturing: Area Selective Deposition, Atomic Layer Annealing, and Atomic Layer Etching (invited review)
    International Journal of Precision Engineering and Manufacturing (IF 3.6 (Q1)), Vol. 56(9), pp. 2551-2571. (연구재단(중견, 중점연), 산업부(반도체대학원), 삼성전자 지원)
    S. Lee G. Lee J. Oh J. An*
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  • Structurally reordered crystalline atomic layer - dielectric hybrid metasurfaces for near-unity efficiency in the visible
    91
    Structurally reordered crystalline atomic layer - dielectric hybrid metasurfaces for near-unity efficiency in the visible
    Materials Today(IF 21.1 (JCR 3.5%)), Vol. 88, pp. 137-145.
    J. Seong Y. Yang Y. Jeon C. Lee J. An J. Rho*
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  • In-situ Post-Doping Plasma Process during Atomic Layer Deposition of Al-Doped TiO2 for Sub-Nanometer Lattice Ordering and Defect Annihilation
    90
    In-situ Post-Doping Plasma Process during Atomic Layer Deposition of Al-Doped TiO2 for Sub-Nanometer Lattice Ordering and Defect Annihilation
    Int. J. Extrem. Manuf. (IF 21.3 (JCR 0.7%)), Vol. 8(1), p.015101. (연구재단(중점연), 삼성전자 지원) [주간한국: 플라즈마 기반 유전막 신공정 개발 (https://weekly.hankooki.com/news/articleView.html?idxno=7131659)] [외신(CADENA 3): https://www.miragenews.com/new-process-boosts-semiconductor-performance-1557957/ ]
    G. Lee Y. Sunwoo H. Kim G. Han J. Oh S. Lee B. Kim* J. An*
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  • Large Area High-Performance Thin Film Solid Oxide Fuel Cell with Nanoscale Anode Functional Layer by Scalable Reactive Sputtering
    89
    Large Area High-Performance Thin Film Solid Oxide Fuel Cell with Nanoscale Anode Functional Layer by Scalable Reactive Sputtering
    Adv. Sci. (IF 14.3 (JCR 6.5%)), Vol. 12(29), p.2502504 (Back Cover Article) (연구재단(중점연, 중견), 에기평 지원)
    K. Ju S. Oh J.H. Lee H.J. Kim H. Kim S.E. Jo J. Lee B.C. Yang J. Yoon D.W. Shin W. Park J.W. Son Y.B. Kim* S. Yang* J. An*
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  • A Nanocrystalline La0.6Sr0.4Co0.4Fe0.6O3−δ Interlayer for Enhanced Oxygen Electrode-Electrolyte Interface in Solid Oxide Cell
    88
    A Nanocrystalline La0.6Sr0.4Co0.4Fe0.6O3−δ Interlayer for Enhanced Oxygen Electrode-Electrolyte Interface in Solid Oxide Cell
    J. Mater. Chem. A, Vol.13, pp.14743-14750 (IF 10.7 (JCR 10%)) (Selected as 2025 Emerging Investigators) (연구재단(중점연, 중견), 에기평 지원)
    J. Lee K. Ju H.J. Yoo S.E. Jo H. Kim G. Park G. Han W. Park G.Y. Cho H.J. Kim* J. An*
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  • 기본썸네일이미지
    87
    Tuning electrical performances of ALD TiO2-based thin film capacitor by Ar/O2 plasma-based atomic layer annealing
    Surface and Coating Technology, Vol. 503, p.132014 (IF 5.4) (연구재단(중견, 중점연), 삼성전자 지원)
    G. Han S. Lee G. Park G. Lee H.J. Kim D. Go* J. An*
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  • 기본썸네일이미지
    86
    Surface Modification of Sr2Fe1.5Mo0.5O6-𝛿 Perovskite Electrode with Ru Nanoparticles via Plasma-Enhanced Atomic Layer Deposition for Solid Oxide Fuel Cells
    Mat. Chem. Phys., Vol. 332, p. 130255 (IF 4.3) (Collaboration w/ NTU(Singapore))
    J. Shin G. Park H.-Y. Li J. An* P. C. Su*
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  • Active and Stable Plasma-Enhanced ALD Pt@Ni-YSZ Hydrogen Electrode for Steam Reversible Solid Oxide Cells
    85
    Active and Stable Plasma-Enhanced ALD Pt@Ni-YSZ Hydrogen Electrode for Steam Reversible Solid Oxide Cells
    Applied Catalysis B: Environment and Energy, Vol.362, p.124740 (IF 20.2, JCR 0.6%) (연구재단(중점연, 중견), 에기평 지원) (Collaboration w/ UC Merced (US)/CAU(Korea))
    H. J. Kim H. Li D. Kim G. Park S. E. Jo K. Ju G. Han Y. Kwon H. Park* M. H. Lee* J. An*
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  • Simultaneous determination of the phase boundary thermal resistance and thermal conductivity in phase-separated TiO2 thin films
    84
    Simultaneous determination of the phase boundary thermal resistance and thermal conductivity in phase-separated TiO2 thin films
    Acta Mater., Vol.277, p.120165 (IF 9.4, JCR 3.2%) (연구재단(중견) 지원) (Collaboration w/ SKKU (Korea))
    S. I. Park S. Lee J. An* J. Cho*
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  • High-Performance TiO2/ZrO2/TiO2 Thin Film Capacitor by Plasma-Assisted Atomic Layer Annealing
    83
    High-Performance TiO2/ZrO2/TiO2 Thin Film Capacitor by Plasma-Assisted Atomic Layer Annealing
    ACS Appl. Mater. Interfaces, Vol.16, p.34419 (IF: 9.5, JCR 15.8%) (산기평(차세대반도체), 연구재단(중견, 중점연), 삼성전자 지원) (Collaboration w/ UCSD(US))
    S. Lee G. Han K.H. Kim D. Shim D. Go* J. An*
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